Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Film Capacitors
نویسندگان
چکیده
As an emerging nonvolatile memory technology, HfO2-based ferroelectrics exhibit excellent compatibility with silicon CMOS process flows; however, the reliability of polarization switching in these materials remains a major challenge. During repeated field programming and erase state initially pristine ferroelectric capacitors, magnitude measured increases, phenomenon known as “wake-up”. In this study, authors attempt to understand what causes wake-up effect Hf0.5Zr0.5O2 (HZO) capacitors using nondestructive methods that probe statistically significant sample volumes. Synchrotron X-ray diffraction reveals concerted shift HZO Bragg peak position function cycle number films prepared under conditions such they extremely large (≈3000%) wake-up. contrast, control insignificant shows no shift. Capacitance – voltage measurements show evolution capacitance loop for change sample. Piezoresponse force microscopy are utilized visualize domain The combination observations clearly demonstrates is caused by field-driven phase transformation tetragonal metastable orthorhombic during capacitors.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2023
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202300016